Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25µA (Max.) @ VDS= 600V Lower RDS(ON) : 2.037 (Typ.)

isc N-Channel MOSFET Transistor

文件：280.17 Kbytes Page：2 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.09044 Mbytes Page：9 Pages

Advanced Power MOSFET

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4 Amps竊?00Volts N-Channel MOSFET

文件：543.79 Kbytes Page：5 Pages

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：397.76 Kbytes Page：8 Pages

N-Channel Power MOSFET

文件：987.64 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：607.6 Kbytes Page：7 Pages