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SSM3K价格

参考价格：￥0.4160

型号：SSM3K01F 品牌：TOSHIBA 备注：这里有SSM3K多少钱，2025年最近7天走势，今日出价，今日竞价，SSM3K批发/采购报价，SSM3K行情走势销售排行榜，SSM3K报价。

型号	功能描述	生产厂家企业	LOGO
SSM3K01F	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K01T	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications • Small Package • Low on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) • Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V (@VDS = 3 V, ID = 0.	TOSHIBA 东芝	TOSHIBA
SSM3K01T	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K01T	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K02F	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications • Small package • Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)	TOSHIBA 东芝	TOSHIBA
SSM3K02F	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K02T	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K02T	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K03FE	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package	TOSHIBA 东芝	TOSHIBA
SSM3K05FU	TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHALLEL MOS TYPE High Speed Switching Applications • Small package • Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω max (@VGS = 2.5 V) • Low gate threshold voltage	TOSHIBA 东芝	TOSHIBA
SSM3K101TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K104TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K105TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K106TU	Silicon N Channel MOS Type High-Speed Switching Applications High-Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 530 mΩ (max) (@VGS = 4 V) Ron = 310 mΩ (max) (@VGS = 10 V)	TOSHIBA 东芝	TOSHIBA
SSM3K106TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K107TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K116TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K119TU	Silicon N Channel MOS Type Power Management Switch Applications Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Ron = 134 mΩ (max) (@VGS = 1.8V) Ron = 90 mΩ (max) (@VGS = 2.5V) Ron = 74 mΩ (max) (@VGS = 4.0V)	TOSHIBA 东芝	TOSHIBA
SSM3K119TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K121TU	Silicon N-Channel MOS Type Power Management Switch Applications Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 140 mΩ (max) (@VGS = 1.5 V) Ron = 93 mΩ (max) (@VGS = 1.8 V) Ron = 63 mΩ (max) (@VGS = 2.5 V)	TOSHIBA 东芝	TOSHIBA
SSM3K121TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K122TU	Power Management Switch Applications Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance: Ron = 304 mΩ (max) (@VGS = 1.5 V) Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max)	TOSHIBA 东芝	TOSHIBA
SSM3K122TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K122TU	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V) Ron = 123 mΩ (max) (@VGS = 4.0 V)	TOSHIBA 东芝	TOSHIBA
SSM3K122TU_V01	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V) Ron = 123 mΩ (max) (@VGS = 4.0 V)	TOSHIBA 东芝	TOSHIBA
SSM3K123TU	Power Management Switch Applications Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V) Ron = 32 mΩ (max) (@VGS = 2.5 V)	TOSHIBA 东芝	TOSHIBA
SSM3K123TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K124TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K127TU	TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8V drive • Low ON-resistance: Ron = 286 mΩ (max) (@VGS = 1.8V) : Ron = 167 mΩ (max) (@VGS = 2.5V) : Ron = 123 mΩ (max) (@VGS = 4.0V)	TOSHIBA 东芝	TOSHIBA
SSM3K127TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K128TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K12T	CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category DC-DC Converter High Speed Switching Applications • Small Package • Low ON-resistance : Ron = 95 mΩ (max) (@VGS = 10 V) : Ron = 145 mΩ (max) (@VGS = 4.5 V) • High speed : ton = 21 ns : toff = 16 ns	TOSHIBA 东芝	TOSHIBA
SSM3K12T	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K131TU	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K14T	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) DC-DC Converter High Speed Switching Applications • Small Package • Low ON-resistance: Ron = 39 mΩ (max) (@VGS = 10 V) : Ron = 57 mΩ (max) (@VGS = 4.5 V) • High speed: ton = 24 ns (typ.) : toff = 19 ns (typ.)	TOSHIBA 东芝	TOSHIBA
SSM3K14T	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K14T	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K15ACT	N-Channel Enhancement Mode MOSFET Application + Load/Power Switching + Interfacing Switching + Battery Management for Ultra Small Portable Electronics + Logic Level Shift	TECHPUBLIC 台舟电子	TECHPUBLIC
SSM3K15AFS	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) Load Switching Applications • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)	TOSHIBA 东芝	TOSHIBA
SSM3K15AFS_V01	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) Load Switching Applications • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)	TOSHIBA 东芝	TOSHIBA
SSM3K17FU	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications • Suitable for high-density mounting due to compact package • High drain-source voltage • High speed switching	TOSHIBA 东芝	TOSHIBA
SSM3K301T	Silicon N-Channel MOS Type Power Management Switch Applications Power Management Switch Applications High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: Ron = 110 mΩ (max) (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V) Ron = 56 mΩ (max) (@VGS = 4.0 V)	TOSHIBA 东芝	TOSHIBA
SSM3K301T	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K301T	N-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications	VBSEMI 微碧半导体	VBSEMI
SSM3K302T	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K303T	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K309T	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K310T	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K315T	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K315T	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K316T	Fiwld Effect Transistor Silicon N Channel MOS Type Power Management Switch Applications High-Speed Switching Applications • 1.8-V drive • Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V) Ron = 65 mΩ (max) (@VGS = 4.5 V)	TOSHIBA 东芝	TOSHIBA
SSM3K316T	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K316T	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K318T	Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS?? ○ Load Switching Applications ○ High-Speed Switching Applications • 4.5 V drive • Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V)	TOSHIBA 东芝	TOSHIBA
SSM3K318T	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K318T	N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K320T	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
SSM3K320T	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
SSM3K324R	TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) Applications • Power Management Switches • DC-DC Converters	TOSHIBA 东芝	TOSHIBA
SSM3K324R	MOSFETs Silicon N-Channel MOS Applications • Power Management Switches • DC-DC Converters Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V)	TOSHIBA 东芝	TOSHIBA

SSM3K产品属性

类型
描述
型号
SSM3K
制造商
TOSHIBA
制造商全称
Toshiba Semiconductor
功能描述
High Speed Switching Applications

SSM3K供应商更多...

更新时间：2025-11-5 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市金芯世纪电子有限公司	SSM40P03GH	SILICON LABS/芯科	22+	SOT-252	100000	代理渠道/只做原装/可含税	询价
上海意淼电子科技有限公司	SSM4129	HAR	23+	DIP-40	2680	全新原装假一赔十	询价
深圳市胜彬电子有限公司	SSM4128/B00	MAXIM	22+	DIP28	3000	原装正品,支持实单	询价
深圳市澳亿芯电子科技有限公司	SSM4131-A02	HARRIS	24+	DIP	12000	原装正品有挂就有货	询价
深圳市中联芯电子有限公司	SSM40N03P	SILICON LABS/芯科	24+	TO-220	12000	原装正品真实现货杜绝虚假	询价
深圳市一线半导体有限公司	SSM3N		24+	N/A	1000		询价
齐创科技(上海,北京,青岛)有限公司	SSM4129	HARRIS	23+	DIP-40	5000	原装正品,假一罚十	询价
深圳市创盛芯科技有限公司	SSM4134/AOO	SSM	25+	DIP	386	全新原装正品支持含税	询价
上海凌岳电子科技有限公司（上海涵恩科技）	SSM4129		2023+	DIP-40	3000	进口原装现货	询价
深圳市赛美科科技有限公司	SSM40P03GH	Silicon		TO-252	35500	一级代理原装正品假一罚十价格优势长期供货	询价

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SSM9926GM
SSM9926GM
2021-11-26
SSM9926EM-A
SSM9926EM-A
2021-11-26
SSM9960GM
SSM9960GM
2021-10-21
SSM2142
SSM2142，全新原装当天发货或门市自取0755-82732291.
2019-12-23

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DdatasheetPDF页码索引