110V N-Channel MOSFET

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Advanced trench process technology

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MOSFET

110V N-Channel MOSFET

文件：1.42428 Mbytes Page：5 Pages

110V N-Channel MOSFET

文件：1.25971 Mbytes Page：5 Pages

Advanced trench process technology

文件：880.21 Kbytes Page：5 Pages

MOSFET

110V N-Channel MOSFET

文件：1.25971 Mbytes Page：5 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 30 (7/38) AWG Tinned Copper 0.012 b) Insulation 0.010 Wall, Nom. PVC 0.032 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 3 WHITE 2) Cable Assembly 3 Components Cabled a) Twists: 40.0

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 30 (7/38) AWG Tinned Copper 0.012 b) Insulation 0.010 Wall, Nom. PVC 0.032 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 3 WHITE 2) Cable Assembly 3 Components Cabled a) Twists: 40.0

Type KX Thermocouple, 1 Pr #16 Sol, FEP Ins Yel, Red, OS, Yellow FEP Jkt,300V PLTC CL2P 200C SUN RES

Product Description Type KX Thermocouple, 1 Pair 16AWG (Solid) Chromel+Alumel, FEP Insulation Yel, Red Color Code, Overall Beldfoil® Shield, Yellow FEP Outer Jacket, PLTC CL2P 200C SUN RES

SILICON TRANSISTORS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor

Drywall Punch

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