PNP SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

FEATURES

• Low VCE(sat)

VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA)

• High PT in small dimension with general-purpose

PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A

• Complementary transistor with 2SD1616 and 1616A