| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Ch Enhancement Mode Power MOSFET 文件：460.29 Kbytes Page：4 Pages | SECOS 喜可士 |   | ||
N-Ch Enhancement Mode Power MOSFET 文件：460.29 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01921 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
MosFET | SECOS 喜可士 | | ||
MosFET | SECOS 喜可士 | | ||
N-Ch Enhancement Mode Power MOSFET 文件：548.52 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
30V N-Channel Power Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances | UMW 友台半导体 | | ||
30V N-Channel Power General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on | EVVOSEMI 翊欧 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01839 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
30A竊?0V N-CHANNEL MOSFET 文件：235.42 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.0152 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SECOS |
24+ |
NA/ |
53250 |
原厂直销,现货供应,账期支持! |
|||
VBsemi/台湾微碧 |
22+ |
TO-252 |
20000 |
公司只做原装 品质保证 |
|||
VBsemi |
24+ |
TO252 |
18000 |
假一赔百原装正品价格优势实单可谈 |
|||
VBsemi |
25+ |
TO252 |
4555 |
||||
SECOS |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
SECOS |
23+ |
TO252 |
4200 |
原厂原装正品 |
|||
VBsemi |
21+ |
TO-252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SECOS |
2022+ |
TO-252 |
32500 |
原厂代理 终端免费提供样品 |
|||
SECOS |
24+ |
TO-252 |
60000 |
||||
VBSEMI/台湾微碧 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
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SSFD3006,全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
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DdatasheetPDF页码索引
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