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SSD20

Standard fuse links size E1

文件:77.95 Kbytes Page:3 Pages

COOPER

SSD20

Circuit Protection Solutions Low Voltage Fuse Links Catalogue

文件:4.91849 Mbytes Page:55 Pages

COOPER

SSD20

ESD

SINEDEVICE

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Extremely Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Rugged Polysilicon Gate Cell Structure ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability ❐ Surface Mounding Package : 8SOP

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Extremely Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Rugged Polysilicon Gate Cell Structure ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability ❐ Surface Mounding Package : 8SOP

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

Dual P-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(on) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

N-Ch Enhancement Mode Power MOSFET

DESCRIPTION The SSD20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicati

SECOS

喜可士

N-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

SECOS

喜可士

N-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pr

SECOS

喜可士

N-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

SECOS

喜可士

P-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable And battery-powered products such as computers, pri

SECOS

喜可士

P-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

SECOS

喜可士

P-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, p

SECOS

喜可士

Dual N-CHANNEL POWER MOSFET

ONSEMI

安森美半导体

Dual N-CHANNEL POWER MOSFET

ONSEMI

安森美半导体

Dual P-Channel 20V (D-S) MOSFET

文件:2.11607 Mbytes Page:8 Pages

VBSEMI

微碧半导体

丝印代码:20N06;N-Ch Enhancement Mode Power MOSFET

文件:354.27 Kbytes Page:4 Pages

SECOS

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N-Ch Enhancement Mode Power MOSFET

文件:401.98 Kbytes Page:4 Pages

SECOS

喜可士

N-Channel 6 0-V (D-S) MOSFET

文件:899.03 Kbytes Page:6 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件:674.93 Kbytes Page:5 Pages

DOINGTER

杜因特

N-Ch Enhancement Mode Power MOSFET

文件:538.32 Kbytes Page:4 Pages

SECOS

喜可士

N-Channel 100 V (D-S) MOSFET

文件:1.01079 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Ch Enhancement Mode Power MOSFET

文件:538.32 Kbytes Page:4 Pages

SECOS

喜可士

N-Channel 100 V (D-S) MOSFET

文件:1.01075 Mbytes Page:7 Pages

VBSEMI

微碧半导体

丝印代码:20N15;N-Channel Enhancement MOSFET

文件:672.09 Kbytes Page:5 Pages

SECOS

喜可士

N-Channel 150 V (D-S) MOSFET

文件:1.00484 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Ch Enhancement Mode Power MOSFET

文件:464.7 Kbytes Page:4 Pages

SECOS

喜可士

N-Ch Enhancement Mode Power MOSFET

文件:470.38 Kbytes Page:4 Pages

SECOS

喜可士

N-Channel MOSFET uses advanced trench technology

文件:1.76968 Mbytes Page:5 Pages

DOINGTER

杜因特

P-Ch Enhancement Mode Power MOSFET

文件:412.69 Kbytes Page:4 Pages

SECOS

喜可士

P-Channel 30-V (D-S) MOSFET

文件:1.01705 Mbytes Page:9 Pages

VBSEMI

微碧半导体

P-Ch Enhancement Mode Power MOSFET

文件:388.62 Kbytes Page:4 Pages

SECOS

喜可士

P-Ch Enhancement Mode Power MOSFET

文件:396.01 Kbytes Page:4 Pages

SECOS

喜可士

P-Channel 60-V (D-S) MOSFET

文件:990.46 Kbytes Page:8 Pages

VBSEMI

微碧半导体

P-Ch Enhancement Mode Power MOSFET

文件:447.28 Kbytes Page:4 Pages

SECOS

喜可士

P-Ch Enhancement Mode Power MOSFET

文件:447.28 Kbytes Page:4 Pages

SECOS

喜可士

SSD20产品属性

  • 类型

    描述

  • Type:

    N

  • VDSS (V):

    60

  • VGS (V):

    ± 20

  • RDS(on)(Ohms):

    40 (mΩ)

  • ID (A):

    20

  • PD (W):

    31.3

  • Package:

    TO-252(D-Pack)

更新时间:2026-5-14 12:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
2023+
3.9mm
3000
进口原装现货
ADI/亚德诺
2511
原封装
66900
电子元器件采购降本30%!原厂直采,砍掉中间差价
原装SAMSUNG
SOP
15620
一级代理 原装正品假一罚十价格优势长期供货
S
23+
SOIC-8
8560
受权代理!全新原装现货特价热卖!
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
原装
25+
TO-252
20300
原装特价SSD20N15B-C即刻询购立享优惠#长期有货
SAMSUNG
25+
SOP8
2987
只售原装自家现货!诚信经营!欢迎来电!
SAMSUNG/三星
23+
SOP
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
SAMSUNG
25+
SOP8
2500
强调现货,随时查询!

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