型号 功能描述 生产厂家 企业 LOGO 操作
SSD20

Standard fuse links size E1

文件:77.95 Kbytes Page:3 Pages

COOPER

SSD20

Circuit Protection Solutions Low Voltage Fuse Links Catalogue

文件:4.91849 Mbytes Page:55 Pages

COOPER

SSD20

ESD

ETC

知名厂家

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Extremely Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Rugged Polysilicon Gate Cell Structure ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability ❐ Surface Mounding Package : 8SOP

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Extremely Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Rugged Polysilicon Gate Cell Structure ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability ❐ Surface Mounding Package : 8SOP

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

Dual P-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(on) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

N-Ch Enhancement Mode Power MOSFET

DESCRIPTION The SSD20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicati

SECOS

喜可士

N-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

SECOS

喜可士

N-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pr

SECOS

喜可士

N-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

SECOS

喜可士

P-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable And battery-powered products such as computers, pri

SECOS

喜可士

P-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

SECOS

喜可士

P-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, p

SECOS

喜可士

Dual N-CHANNEL POWER MOSFET

ONSEMI

安森美半导体

Dual N-CHANNEL POWER MOSFET

ONSEMI

安森美半导体

Dual P-Channel 20V (D-S) MOSFET

文件:2.11607 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Ch Enhancement Mode Power MOSFET

文件:354.27 Kbytes Page:4 Pages

SECOS

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N-Ch Enhancement Mode Power MOSFET

文件:401.98 Kbytes Page:4 Pages

SECOS

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N-Channel 6 0-V (D-S) MOSFET

文件:899.03 Kbytes Page:6 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件:674.93 Kbytes Page:5 Pages

DOINGTER

杜因特

N-Ch Enhancement Mode Power MOSFET

文件:538.32 Kbytes Page:4 Pages

SECOS

喜可士

N-Ch Enhancement Mode Power MOSFET

文件:538.32 Kbytes Page:4 Pages

SECOS

喜可士

N-Channel 100 V (D-S) MOSFET

文件:1.01079 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 100 V (D-S) MOSFET

文件:1.01075 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel Enhancement MOSFET

文件:672.09 Kbytes Page:5 Pages

SECOS

喜可士

N-Channel 150 V (D-S) MOSFET

文件:1.00484 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Ch Enhancement Mode Power MOSFET

文件:464.7 Kbytes Page:4 Pages

SECOS

喜可士

N-Ch Enhancement Mode Power MOSFET

文件:470.38 Kbytes Page:4 Pages

SECOS

喜可士

N-Channel MOSFET uses advanced trench technology

文件:1.76968 Mbytes Page:5 Pages

DOINGTER

杜因特

P-Ch Enhancement Mode Power MOSFET

文件:412.69 Kbytes Page:4 Pages

SECOS

喜可士

P-Channel 30-V (D-S) MOSFET

文件:1.01705 Mbytes Page:9 Pages

VBSEMI

微碧半导体

P-Ch Enhancement Mode Power MOSFET

文件:388.62 Kbytes Page:4 Pages

SECOS

喜可士

P-Ch Enhancement Mode Power MOSFET

文件:396.01 Kbytes Page:4 Pages

SECOS

喜可士

P-Channel 60-V (D-S) MOSFET

文件:990.46 Kbytes Page:8 Pages

VBSEMI

微碧半导体

P-Ch Enhancement Mode Power MOSFET

文件:447.28 Kbytes Page:4 Pages

SECOS

喜可士

P-Ch Enhancement Mode Power MOSFET

文件:447.28 Kbytes Page:4 Pages

SECOS

喜可士

SSD20产品属性

  • 类型

    描述

  • 型号

    SSD20

  • 功能描述

    保险丝 20A 240VAC IND

  • RoHS

  • 制造商

    Littelfuse

  • 产品

    Surface Mount Fuses

  • 电流额定值

    0.5 A

  • 电压额定值

    600 V

  • 保险丝类型

    Fast Acting

  • 保险丝大小/组

    Nano

  • 尺寸

    12.1 mm L x 4.5 mm W

  • 端接类型

    SMD/SMT

  • 系列

    485

更新时间:2026-1-27 16:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
26+
SOIC-8
12335
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ADI/亚德诺
26+
NA
60000
原装正品,可BOM配单
SAMSUNG
22+
SOP8
3000
原装正品,支持实单
FAIRCHILD/仙童
2026+
SOP-8
54558
百分百原装现货 实单必成 欢迎询价
SIGMASTAR
25+
QFN128
12000
进口原装正品现货
FAIRCHILD/仙童
23+
SOP-8
24190
原装正品代理渠道价格优势
SAM
24+
SMD-8
2500
本站现库存
SAMSUNG
17+
SO8
6200
100%原装正品现货
SAMSUNG
25+
SOP8
2987
只售原装自家现货!诚信经营!欢迎来电!
原装SAMSUNG
SOP
15620
一级代理 原装正品假一罚十价格优势长期供货

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