| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SSD20 | Standard fuse links size E1 文件:77.95 Kbytes Page:3 Pages | COOPER | ||
SSD20 | Circuit Protection Solutions Low Voltage Fuse Links Catalogue 文件:4.91849 Mbytes Page:55 Pages | COOPER | ||
SSD20 | ESD | SINEDEVICE | ||
Dual N-CHANNEL POWER MOSFET FEATURES ❐ Extremely Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Rugged Polysilicon Gate Cell Structure ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability ❐ Surface Mounding Package : 8SOP | FAIRCHILD 仙童半导体 | |||
Dual N-CHANNEL POWER MOSFET FEATURES ❐ Extremely Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Rugged Polysilicon Gate Cell Structure ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability ❐ Surface Mounding Package : 8SOP | FAIRCHILD 仙童半导体 | |||
Dual N-CHANNEL POWER MOSFET FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability | FAIRCHILD 仙童半导体 | |||
Dual N-CHANNEL POWER MOSFET FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability | FAIRCHILD 仙童半导体 | |||
Dual N-CHANNEL POWER MOSFET FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability | FAIRCHILD 仙童半导体 | |||
Dual N-CHANNEL POWER MOSFET FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability | FAIRCHILD 仙童半导体 | |||
Dual P-CHANNEL POWER MOSFET FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability | FAIRCHILD 仙童半导体 | |||
Dual N-CHANNEL POWER MOSFET FEATURES ❐ Lower RDS(on) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability | FAIRCHILD 仙童半导体 | |||
N-Ch Enhancement Mode Power MOSFET DESCRIPTION The SSD20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicati | SECOS 喜可士 | |||
N-Ch Enhancement Mode Power MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri | SECOS 喜可士 | |||
N-Ch Enhancement Mode Power MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pr | SECOS 喜可士 | |||
N-Ch Enhancement Mode Power MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri | SECOS 喜可士 | |||
P-Ch Enhancement Mode Power MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable And battery-powered products such as computers, pri | SECOS 喜可士 | |||
P-Ch Enhancement Mode Power MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri | SECOS 喜可士 | |||
P-Ch Enhancement Mode Power MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, p | SECOS 喜可士 | |||
Dual N-CHANNEL POWER MOSFET | ONSEMI 安森美半导体 | |||
Dual N-CHANNEL POWER MOSFET | ONSEMI 安森美半导体 | |||
Dual P-Channel 20V (D-S) MOSFET 文件:2.11607 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
丝印代码:20N06;N-Ch Enhancement Mode Power MOSFET 文件:354.27 Kbytes Page:4 Pages | SECOS 喜可士 | |||
N-Ch Enhancement Mode Power MOSFET 文件:401.98 Kbytes Page:4 Pages | SECOS 喜可士 | |||
N-Channel 6 0-V (D-S) MOSFET 文件:899.03 Kbytes Page:6 Pages | VBSEMI 微碧半导体 | |||
N-Channel MOSFET uses advanced trench technology 文件:674.93 Kbytes Page:5 Pages | DOINGTER 杜因特 | |||
N-Ch Enhancement Mode Power MOSFET 文件:538.32 Kbytes Page:4 Pages | SECOS 喜可士 | |||
N-Channel 100 V (D-S) MOSFET 文件:1.01079 Mbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
N-Ch Enhancement Mode Power MOSFET 文件:538.32 Kbytes Page:4 Pages | SECOS 喜可士 | |||
N-Channel 100 V (D-S) MOSFET 文件:1.01075 Mbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
丝印代码:20N15;N-Channel Enhancement MOSFET 文件:672.09 Kbytes Page:5 Pages | SECOS 喜可士 | |||
N-Channel 150 V (D-S) MOSFET 文件:1.00484 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
N-Ch Enhancement Mode Power MOSFET 文件:464.7 Kbytes Page:4 Pages | SECOS 喜可士 | |||
N-Ch Enhancement Mode Power MOSFET 文件:470.38 Kbytes Page:4 Pages | SECOS 喜可士 | |||
N-Channel MOSFET uses advanced trench technology 文件:1.76968 Mbytes Page:5 Pages | DOINGTER 杜因特 | |||
P-Ch Enhancement Mode Power MOSFET 文件:412.69 Kbytes Page:4 Pages | SECOS 喜可士 | |||
P-Channel 30-V (D-S) MOSFET 文件:1.01705 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
P-Ch Enhancement Mode Power MOSFET 文件:388.62 Kbytes Page:4 Pages | SECOS 喜可士 | |||
P-Ch Enhancement Mode Power MOSFET 文件:396.01 Kbytes Page:4 Pages | SECOS 喜可士 | |||
P-Channel 60-V (D-S) MOSFET 文件:990.46 Kbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
P-Ch Enhancement Mode Power MOSFET 文件:447.28 Kbytes Page:4 Pages | SECOS 喜可士 | |||
P-Ch Enhancement Mode Power MOSFET 文件:447.28 Kbytes Page:4 Pages | SECOS 喜可士 |
SSD20产品属性
- 类型
描述
- Type:
N
- VDSS (V):
60
- VGS (V):
± 20
- RDS(on)(Ohms):
40 (mΩ)
- ID (A):
20
- PD (W):
31.3
- Package:
TO-252(D-Pack)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2023+ |
3.9mm |
3000 |
进口原装现货 |
||||
ADI/亚德诺 |
2511 |
原封装 |
66900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
原装SAMSUNG |
SOP |
15620 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
S |
23+ |
SOIC-8 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG/三星 |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
原装 |
25+ |
TO-252 |
20300 |
原装特价SSD20N15B-C即刻询购立享优惠#长期有货 |
|||
SAMSUNG |
25+ |
SOP8 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SAMSUNG/三星 |
23+ |
SOP |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
26+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SAMSUNG |
25+ |
SOP8 |
2500 |
强调现货,随时查询! |
SSD20芯片相关品牌
SSD20规格书下载地址
SSD20参数引脚图相关
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SSD20数据表相关新闻
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2019-11-29
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