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型号 功能描述 生产厂家 企业 LOGO 操作
SSD2009A

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

SSD2009A

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

SSD2009A

Dual N-CHANNEL POWER MOSFET

ONSEMI

安森美半导体

Dual N-CHANNEL POWER MOSFET

FEATURES ❐ Lower RDS(ON) ❐ Improved Inductive Ruggedness ❐ Fast Switching Times ❐ Low Input Capacitance ❐ Extended Safe Operating Area ❐ Improved High Temperature Reliability

FAIRCHILD

仙童半导体

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4400 V Mean forward current 1560 A Surge current 18.5 kA

POSEICO

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

PHILIPS

飞利浦

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FREE

STMICROELECTRONICS

意法半导体

10 10W STEREO AMPLIFIER

DESCRIPTION The TDA2009A is class AB dual Hi-Fi Audio power amplifier assembled in Multiwatt package, specially designed for high quality stereo application as Hi-Fi and music centers. ■ HIGH OUTPUT POWER (10 + 10W Min. @ D = 1) ■ HIGH CURRENT CAPABILITY (UP TO 3.5A) ■ AC SHORT CIRCUIT PRO

STMICROELECTRONICS

意法半导体

SSD2009A产品属性

  • 类型

    描述

  • 型号

    SSD2009A

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    Dual N-CHANNEL POWER MOSFET

更新时间:2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
8-SOIC
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
FAIRCHILD/仙童
2450+
SOP-8N
9850
只做原厂原装正品现货或订货假一赔十!
SIGMASTAR
25+
QFN128
12000
全新原装现货
XTW
24+
QFN
30224
绝对原厂支持只做自己现货优势
FAIRCHILD/仙童
21+
SOP-8
30000
优势供应 实单必成 可13点增值税
FAIRCILD
22+
SOIC-8
3000
原装正品,支持实单
onsemi
25+
8-SOIC
20948
样件支持,可原厂排单订货!
SAMSUNG
22+
SO8
20000
只做原装 品质保障
FAIRCHILD/仙童
23+
SOP-8
24190
原装正品代理渠道价格优势
SAMSUNG
17+
SO8
6200
100%原装正品现货

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