NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050B；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 25V 1.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANSISTOR (NPN)

FEATURES ● Power Dissipation PCM : 1 W (Tamb=25°C) ● Collector Current ICM : 1.5 A ● Collector - Base Voltage V(BR)CBO : 40V

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The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

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