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SPP11N65C3价格
参考价格：￥9.3867
型号：SPP11N65C3XKSA1 品牌：Infineon 备注：这里有SPP11N65C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPP11N65C3批发/采购报价，SPP11N65C3行情走势销售排行榜，SPP11N65C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP11N65C3 | Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for ta | Infineon 英飞凌 |   | |
SPP11N65C3 | N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
SPP11N65C3 | N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) | VBSEMI 微碧半导体 | | |
SPP11N65C3 | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
SPP11N65C3 | New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.01964 Mbytes Page：15 Pages | Infineon 英飞凌 | | |
SPP11N65C3 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：574.74 Kbytes Page：15 Pages | Infineon 英飞凌 | | |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.01964 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：574.74 Kbytes Page：15 Pages | Infineon 英飞凌 | | ||
包装：卷带（TR） 描述：MOSFET N-CH 650V 11A TO-220 分立半导体产品 晶体管 - FET，MOSFET - 单个 | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for ta | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.033599 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.01964 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：574.74 Kbytes Page：15 Pages | Infineon 英飞凌 | |
SPP11N65C3产品属性
- 类型
描述
- 型号
SPP11N65C3
- 功能描述
MOSFET COOL MOS N-CH 650V 11A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价SPP11N65C3即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
4000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
18+ |
TO-220 |
16646 |
全新原装现货,可出样品,可开增值税发票 |
|||
Infineon |
TO-220 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
23+ |
TO-220 |
5000 |
专做原装正品,假一罚百! |
|||
INFINEO |
25+ |
TO-220 |
20 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INFINEON |
24+ |
TO-220铁头 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon(英飞凌) |
24+ |
TO-220 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
SPP11N65C3规格书下载地址
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