SPA11N65C3价格
参考价格：￥8.9501
型号：SPA11N65C3 品牌：Infineon 备注：这里有SPA11N65C3多少钱，2026年最近7天走势，今日出价，今日竞价，SPA11N65C3批发/采购报价，SPA11N65C3行情走势销售排行榜，SPA11N65C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPA11N65C3 | Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for ta | INFINEON 英飞凌 |   | |
SPA11N65C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET 650V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. Replacement for 650V CoolMOS™ C3 is CoolMOS™ P7. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per; | INFINEON 英飞凌 | | |
SPA11N65C3 | Isc N-Channel MOSFET Transistor 文件：270.04 Kbytes Page：2 Pages | ISC 无锡固电 | | |
SPA11N65C3 | N-Channel 650V (D-S)Power MOSFET 文件：1.07079 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
SPA11N65C3 | New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.01964 Mbytes Page：15 Pages | INFINEON 英飞凌 | | |
SPA11N65C3 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：574.74 Kbytes Page：15 Pages | INFINEON 英飞凌 | | |
Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for ta | INFINEON 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.01964 Mbytes Page：15 Pages | INFINEON 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：574.74 Kbytes Page：15 Pages | INFINEON 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.01964 Mbytes Page：15 Pages | INFINEON 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：574.74 Kbytes Page：15 Pages | INFINEON 英飞凌 | |
SPA11N65C3产品属性
- 类型
描述
- Package ：
TO-220 FullPAK
- VDS max：
650.0V
- RDS (on) max：
380.0mΩ
- Polarity ：
N
- ID max：
11.0A
- Ptot max：
33.0W
- IDpuls max：
33.0A
- VGS(th) min max：
2.1V 3.9V
- QG ：
45.0nC
- Rth ：
3.8K/W
- RthJC max：
3.8K/W
- RthJA max：
80.0K/W
- Operating Temperature min：
-55.0°C
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
TO-220FPAB-3 |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
INFINEON/英飞凌 |
25+ |
原装 |
32360 |
INFINEON/英飞凌全新特价SPA11N65C3即刻询购立享优惠#长期有货 |
|||
JST(日压) |
2021+ |
8000 |
原装现货，欢迎询价 |
||||
JST |
25+ |
Connector |
26500 |
原厂原装,价格优势 |
|||
JST |
连接器 |
123500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon(英飞凌) |
25+ |
TO-220FPAB-3 |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
JST |
23+ |
NA |
60000 |
正规渠道,只有原装! |
|||
JST/日压 |
2608+ |
/ |
220083 |
一级代理，原装现货 |
|||
JST |
2405+ |
n/a |
9845 |
十年芯路!诚信赢客户!合作创未来! |
|||
JST |
25+ |
端子 |
5864 |
原装原标原盒 给价就出 全网最低 |
SPA11N65C3芯片相关品牌
SPA11N65C3规格书下载地址
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SPA11N65C3数据表相关新闻
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2020-11-13SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
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特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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