SPP04N60价格

参考价格:¥4.2131

型号:SPP04N60C3XKSA1 品牌:Infineon 备注:这里有SPP04N60多少钱,2025年最近7天走势,今日出价,今日竞价,SPP04N60批发/采购报价,SPP04N60行情走势销售排行榜,SPP04N60报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.95Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device per

ISC

无锡固电

N-Channel MOSFET Transistor

文件:339.31 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件:1.09069 Mbytes Page:9 Pages

VBSEMI

微碧半导体

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件:594.28 Kbytes Page:14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件:594.28 Kbytes Page:14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件:1.00191 Mbytes Page:11 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件:371.24 Kbytes Page:11 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件:1.00191 Mbytes Page:11 Pages

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件:371.24 Kbytes Page:11 Pages

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

文件:1.94923 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:1.94027 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:1.94029 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE

文件:62.82 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

文件:64.16 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

SPP04N60产品属性

  • 类型

    描述

  • 型号

    SPP04N60

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2025-12-26 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
3280
原厂直销,现货供应,账期支持!
INFINEON
1922+
TO-220
436
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
INF
25+
TO-220
18000
原厂直接发货进口原装
Infineon
25+
TO-220
30000
代理全新原装现货,价格优势
INFINEON/英飞凌
25+
NA
880000
明嘉莱只做原装正品现货
INFINEON
23+
TO-220
6000
专做原装正品,假一罚百!
INFINEON
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
INFINEON
24+
TO-220
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINEON
NEW
T0-220
7936
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订

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