位置：首页 > IC中文资料第269页 > SPP04N60S5
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP04N60S5 | Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 |   | |
SPP04N60S5 | N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.95Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device per | ISC 无锡固电 | | |
SPP04N60S5 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：371.24 Kbytes Page：11 Pages | Infineon 英飞凌 | | |
SPP04N60S5 | New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：1.00191 Mbytes Page：11 Pages | Infineon 英飞凌 | | |
SPP04N60S5 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：1.00191 Mbytes Page：11 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：371.24 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.95Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device per | ISC 无锡固电 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC0) for target applications | Infineon 英飞凌 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.1288 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel MOSFET Transistor 文件：335.62 Kbytes Page：2 Pages | ISC 无锡固电 | |
SPP04N60S5产品属性
- 类型
描述
- 型号
SPP04N60S5
- 功能描述
MOSFET COOL MOS N-CH 600V 4.5A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
3280 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
23+ |
TO-220 |
6000 |
专做原装正品,假一罚百! |
|||
INFINEON |
24+ |
TO-220 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INF |
25+ |
TO-220 |
18000 |
原厂直接发货进口原装 |
|||
Infineon(英飞凌) |
24+ |
TO-220 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
22+ |
TO-220 |
48868 |
原装现货库存.价格优势 |
|||
Infineon |
17+ |
TO-220 |
6200 |
||||
INF |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
|||
INFINEON |
NEW |
T0-220 |
7936 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
SPP04N60S5规格书下载地址
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DdatasheetPDF页码索引
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