位置：首页 > IC中文资料第269页 > SPP04N60S5
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP04N60S5 | CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
SPP04N60S5 | N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice per | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SPP04N60S5 | CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：371.24 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SPP04N60S5 | NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated 文件：1.00191 Mbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated 文件：1.00191 Mbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：371.24 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice per | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-Channel650V(D-S)PowerMOSFET 文件：2.1288 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelMOSFETTransistor 文件：335.62 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
SPP04N60S5产品属性
- 类型
描述
- 型号
SPP04N60S5
- 功能描述
MOSFET COOL MOS N-CH 600V 4.5A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
21+ |
TO-220铁头 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INF |
23+ |
TO-220 |
18000 |
||||
INFINEON |
23+ |
TO-220 |
6000 |
专做原装正品,假一罚百! |
|||
infineon technologies |
23+ |
NA |
25987 |
原装现货 库存特价/长期供应元器件代理经销 |
|||
infineon |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
INFINEON/英飞凌 |
23+ |
NA/ |
3280 |
原厂直销,现货供应,账期支持! |
|||
MICROCHIP |
2022+ |
SOT-23 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
INFINEO |
21+ |
TO220 |
12588 |
原装现货价格优势 |
|||
infineon |
2020+ |
P-TO220-3-1 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
Infineon |
23+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
SPP04N60S5芯片相关品牌
SPP04N60S5规格书下载地址
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DdatasheetPDF页码索引
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