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SPP03N6价格
参考价格：￥4.5612
型号：SPP03N60C3XKSA1 品牌：Infineon 备注：这里有SPP03N6多少钱，2024年最近7天走势，今日出价，今日竞价，SPP03N6批发/采购报价，SPP03N6行情走势销售排行榜，SPP03N6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultralowcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perf | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated 文件：599.57 Kbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
COOLMOSPOWERTRANSISTOR 文件：1.99914 Mbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
COOLMOSPOWERTRANSISTOR 文件：1.99914 Mbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated 文件：599.57 Kbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistor 文件：251.72 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：362.25 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistor 文件：251.72 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：362.25 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
30V,40A,3.8mmax.BuiltinSBDNChannelPowerMOSFETHighSpeedPowerSwitching 文件：206.95 Kbytes Page：7 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
SPP03N6产品属性
- 类型
描述
- 型号
SPP03N6
- 功能描述
MOSFET MOSFET N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
T0-220 |
7936 |
||||
英飞凌 |
06+ |
TO-220 |
4500 |
原装 |
|||
INFINEON |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
|||
infineon technologies |
23+ |
NA |
25987 |
原装现货 库存特价/长期供应元器件代理经销 |
|||
st |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
INFINEON |
23+ |
TO-220 |
6000 |
专做原装正品,假一罚百! |
|||
INFINEON/英飞凌 |
2021+ |
TO-220 |
17404 |
原装进口假一罚十 |
|||
INFINEON/英飞凌 |
23+ |
NA/ |
40 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
23+ |
TO-220 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
21+ |
TO-220 |
60000 |
原装正品进口现货 |
SPP03N6芯片相关品牌
SPP03N6规格书下载地址
SPP03N6参数引脚图相关
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- SPN8902
- SPN8882
- SPN-8
- SPN75-15S
- SPN-6
- SPN-40-267
- SPN-4
- SPN-37-267
- SPN30-24S
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2020-11-10
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