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SPP02N60价格
参考价格：￥3.1531
型号：SPP02N60C3 品牌：Infineon 备注：这里有SPP02N60多少钱，2024年最近7天走势，今日出价，今日竞价，SPP02N60批发/采购报价，SPP02N60行情走势销售排行榜，SPP02N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：462.48 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
COOLMOSPOWERTRANSISTOR 文件：462.48 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：462.48 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
COOLMOSPOWERTRANSISTOR 文件：462.48 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：357.04 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：357.04 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.70191 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.70195 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.70167 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.70169 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
NCHANNELENHANCEMENTMODE 文件：701.78 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
SPP02N60产品属性
- 类型
描述
- 型号
SPP02N60
- 功能描述
MOSFET COOL MOS N-CH 600V 1.8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
T0-220 |
7936 |
||||
INFINEON/英飞凌 |
22+ |
TO-220 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
INFINEON |
2016+ |
TO-220 |
3000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
INFINOEN |
24+ |
TO-220-3 |
90000 |
一级代理进口原装现货、假一罚十价格合理 |
|||
INFINEON/英飞凌 |
2021+ |
TO-220 |
18290 |
原装进口假一罚十 |
|||
Infineon(英飞凌) |
23+ |
TO-220 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
21+ |
TO-220 |
60000 |
原装正品进口现货 |
|||
Infineon |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
12245 |
现货,原厂原装假一罚十! |
|||
INFINEON |
2020+ |
TO-220 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
SPP02N60芯片相关品牌
SPP02N60规格书下载地址
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