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SPP02N60价格
参考价格：￥3.1531
型号：SPP02N60C3 品牌：Infineon 备注：这里有SPP02N60多少钱，2025年最近7天走势，今日出价，今日竞价，SPP02N60批发/采购报价，SPP02N60行情走势销售排行榜，SPP02N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | ||
Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance an | ISC 无锡固电 | | ||
COOL MOS POWER TRANSISTOR 文件：462.48 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：462.48 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：462.48 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
COOL MOS POWER TRANSISTOR 文件：462.48 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：357.04 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：357.04 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70191 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70195 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70167 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70169 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N CHANNEL ENHANCEMENT MODE 文件：701.78 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
SPP02N60产品属性
- 类型
描述
- 型号
SPP02N60
- 功能描述
MOSFET COOL MOS N-CH 600V 1.8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
8000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
2016+ |
TO-220 |
3000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
Infineon |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON |
23+ |
TO-220 |
6000 |
专做原装正品,假一罚百! |
|||
INFINEON |
NEW |
T0-220 |
7936 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEON |
21+ |
TO-220铁头 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
||||
INFINEON |
23+ |
TO220 |
7850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON |
23+ |
TO220 |
30000 |
代理全新原装现货,价格优势 |
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SPP02N60规格书下载地址
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