型号 功能描述 生产厂家&企业 LOGO 操作
SPP02N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
SPP02N60S5

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
SPP02N60S5

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
SPP02N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

文件:357.04 Kbytes Page:10 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

文件:357.04 Kbytes Page:10 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

N-ChannelMOSFETTransistor

•DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel650V(D-S)PowerMOSFET

文件:1.68505 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

文件:1.67706 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel650V(D-S)MOSFET

文件:1.71684 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SPP02N60S5产品属性

  • 类型

    描述

  • 型号

    SPP02N60S5

  • 功能描述

    MOSFET COOL MOS N-CH 600V 1.8A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-7-25 20:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
21+
TO220
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
24+
NA/
5240
原厂直销,现货供应,账期支持!
infineon
1822+
TO-220
9852
只做原装正品假一赔十为客户做到零风险!!
INFINEON
TO220
9500
一级代理 原装正品假一罚十价格优势长期供货
INFINEON
23+
TO-220
6000
专做原装正品,假一罚百!
Infineon
17+
TO-220
6200
INFINEON/英飞凌
2022+
TO-220
30000
进口原装现货供应,原装 假一罚十
INFINEON
24+
TO220-3
90000
一级代理商进口原装现货、假一罚十价格合理
INFINEON/英飞凌
21+
TO-220
30000
优势供应 实单必成 可13点增值税
INFINEON
23+
T0-220
7936

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