Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant; available in Halogen free m

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤600mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS Power Transistor

文件：620.29 Kbytes Page：11 Pages

Cool MOS??Power Transistor

文件：710.74 Kbytes Page：11 Pages

Cool MOS Power Transistor

文件：620.29 Kbytes Page：11 Pages

Cool MOS??Power Transistor

文件：710.74 Kbytes Page：11 Pages

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

N-CHANNEL SILICON POWER MOSFET

文件：451.57 Kbytes Page：5 Pages

POWER FIELD EFFECT TRANSISTOR

文件：224.7 Kbytes Page：7 Pages

POWER FIELD EFFECT TRANSISTOR

文件：226.35 Kbytes Page：7 Pages

N-CHANNEL SILICON POWER MOSFET

文件：451.57 Kbytes Page：5 Pages