N-CHANNEL SILICON POWER MOSFET

Super FAP-E3 series    Maintains both low power loss and low noise\n   Lower RDS(on) characteristic\n   More controllable switching dv/dt by gate resistance\n   Smaller VGS ringing waveform during switching\n   Narrow band of the gate threshold voltage (3.0±0.5V)\n   High avalanche durabilityApplications\n   Switching ;

N-CHANNEL SILICON POWER MOSFET

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POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

POWER FIELD EFFECT TRANSISTOR

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POWER FIELD EFFECT TRANSISTOR

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N-Channel Power MOSFET 500 V, 0.69 

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N-Channel Power MOSFET 500 V, 0.69 

文件：146.17 Kbytes Page：6 Pages