位置：首页 > IC中文资料第5158页 > SPD07N20T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated | INFINEON 英飞凌 |   | ||
SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated 文件：830.68 Kbytes Page：10 Pages | INFINEON 英飞凌 | | ||
SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated 文件：830.68 Kbytes Page：10 Pages | INFINEON 英飞凌 | | ||
Power Filed Effect Transistor FEATURES ● Robust High Voltage Termination ● Avalanche Energy Specified ● Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ● Diode is Characterized for Use in Bridge Circuits ● IDSS and VDS(on) Specified at Elevated Temperature | JIANGSU 长电科技 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated | INFINEON 英飞凌 | |
SPD07N20T产品属性
- 类型
描述
- 型号
SPD07N20T
- 制造商
Infineon Technologies AG
- 功能描述
SP000077394
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
VBsemi |
25+ |
TO252 |
3701 |
||||
INFINEON |
24+ |
TO-252 |
36800 |
||||
INFINEON/英飞凌 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON/英飞凌 |
2026+ |
TO-252D-PAK |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEON |
23+ |
TO252 |
6996 |
只做原装正品现货 |
|||
INFINEON |
22+ |
P-TO252-3-1 |
16768 |
原装现货库存.价格优势 |
|||
INFINEON/英飞凌 |
24+ |
SOT-252 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
23+ |
TO-252D-PAK |
24190 |
原装正品代理渠道价格优势 |
|||
INFINEON |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
SPD07N20T规格书下载地址
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DdatasheetPDF页码索引
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