SPD07N20价格

参考价格:¥2.5992

型号:SPD07N20G 品牌:Infineon 备注:这里有SPD07N20多少钱,2025年最近7天走势,今日出价,今日竞价,SPD07N20批发/采购报价,SPD07N20行情走势销售排行榜,SPD07N20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SPD07N20

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated

Infineon

英飞凌

SPD07N20

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件:830.68 Kbytes Page:10 Pages

Infineon

英飞凌

SPD07N20

SIPMOS Power Transistor

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Ideal for high-frequency switching and synchronous rectification • FEATURES • Static drain-source on-resistance: RDS(on)≤0.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

VBSEMI

微碧半导体

20V-300V N-Channel Power MOSFET

Infineon

英飞凌

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件:830.68 Kbytes Page:10 Pages

Infineon

英飞凌

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件:830.68 Kbytes Page:10 Pages

Infineon

英飞凌

Power Filed Effect Transistor

FEATURES ● Robust High Voltage Termination ● Avalanche Energy Specified ● Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ● Diode is Characterized for Use in Bridge Circuits ● IDSS and VDS(on) Specified at Elevated Temperature

JIANGSU

长电科技

N-Channel MOSFET Transistor

• DESCRITION • Ideal for high-frequency switching and synchronous rectification • FEATURES • Static drain-source on-resistance: RDS(on)≤0.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

SPD07N20产品属性

  • 类型

    描述

  • 型号

    SPD07N20

  • 功能描述

    MOSFET N-CH 200 V 7 A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-29 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INF
24+
NA/
850
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON/英飞凌
25+
TO-252D-PAK
54558
百分百原装现货 实单必成 欢迎询价
INFINEON
14+
TO-252
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
INFINEON
23+
TO252
6996
只做原装正品现货
INFINEON/英飞凌
21+
TO-252D-PAK
30000
优势供应 实单必成 可13点增值税
INFINEON/英飞凌
24+
TO-252
2500
只做原厂渠道 可追溯货源
INFINEON
24+
TO-252
8500
原厂原包原装公司现货,假一赔十,低价出售
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON/英飞凌
23+
TO-252D-PAK
24190
原装正品代理渠道价格优势

SPD07N20数据表相关新闻