N-Channel MOSFET Transistor

• DESCRITION • Ideal for high-frequency switching and synchronous rectification • FEATURES • Static drain-source on-resistance: RDS(on)≤0.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件：830.68 Kbytes Page：10 Pages

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件：830.68 Kbytes Page：10 Pages

Power Filed Effect Transistor

FEATURES ● Robust High Voltage Termination ● Avalanche Energy Specified ● Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ● Diode is Characterized for Use in Bridge Circuits ● IDSS and VDS(on) Specified at Elevated Temperature

N-Channel MOSFET Transistor

• DESCRITION • Ideal for high-frequency switching and synchronous rectification • FEATURES • Static drain-source on-resistance: RDS(on)≤0.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation