Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant; available Halogen free mold compound a) • Qualified according

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Cool MOS Power Transistor

文件：630.71 Kbytes Page：11 Pages

Cool MOS Power Transistor

文件：720.94 Kbytes Page：11 Pages

Cool MOS Power Transistor

文件：630.71 Kbytes Page：11 Pages

Cool MOS Power Transistor

文件：720.94 Kbytes Page：11 Pages

N-Channel Enhancement

InPower Product Lines

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 650V (D-S)Power MOSFET

文件：1.0755 Mbytes Page：9 Pages

N-Channel Power MOSFET 500 V, 3.3 

文件：124.45 Kbytes Page：8 Pages

Super high dense cell design for low RDS(ON).

文件：418.46 Kbytes Page：10 Pages