SPD02N60C3价格

参考价格:¥2.5832

型号:SPD02N60C3 品牌:Infineon 备注:这里有SPD02N60C3多少钱,2025年最近7天走势,今日出价,今日竞价,SPD02N60C3批发/采购报价,SPD02N60C3行情走势销售排行榜,SPD02N60C3报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SPD02N60C3

Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Infineon

英飞凌

SPD02N60C3

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

SPD02N60C3

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

SPD02N60C3

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

SPD02N60C3

Cool MOS Power Transistor

文件:1.22437 Mbytes Page:13 Pages

Infineon

英飞凌

SPD02N60C3

Cool MOS Power Transistor

文件:1.01922 Mbytes Page:13 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件:1.22437 Mbytes Page:13 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件:1.01922 Mbytes Page:13 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Infineon

英飞凌

Cool MOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Qualified according to JEDEC0) for target applications

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

文件:1.71683 Mbytes Page:8 Pages

VBSEMI

微碧半导体

SPD02N60C3产品属性

  • 类型

    描述

  • 型号

    SPD02N60C3

  • 功能描述

    MOSFET COOL MOS PWR TRANS 650V 1.8A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-21 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
5673
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON
2016+
TO-252
3500
只做原装,假一罚十,公司可开17%增值税发票!
INFINEON
1029+
TO-252
2301
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON
24+
TO-252
90000
一级代理商进口原装现货、假一罚十价格合理
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
INFINEON
2430+
TO252
8540
只做原装正品假一赔十为客户做到零风险!!
INFINEON
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
infineon
25+
TO-252
4500
全新原装、诚信经营、公司现货销售!
INFINEON/英飞凌
25+
TO-252
30000
全新原装现货,价格优势
INFINEON/英飞凌
23+
TO-252
6000
专业配单保证原装正品假一罚十

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