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SPD02N60C3价格
参考价格：￥2.5832
型号：SPD02N60C3 品牌：Infineon 备注：这里有SPD02N60C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPD02N60C3批发/采购报价，SPD02N60C3行情走势销售排行榜，SPD02N60C3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPD02N60C3 | Cool MOS Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances | Infineon 英飞凌 |   | |
SPD02N60C3 | N-Channel MOSFET Transistor • DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
SPD02N60C3 | N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | |
SPD02N60C3 | Cool MOS Power Transistor 文件：1.22437 Mbytes Page：13 Pages | Infineon 英飞凌 | | |
SPD02N60C3 | Cool MOS Power Transistor 文件：1.01922 Mbytes Page：13 Pages | Infineon 英飞凌 | | |
Cool MOS Power Transistor 文件：1.22437 Mbytes Page：13 Pages | Infineon 英飞凌 | | ||
Cool MOS Power Transistor 文件：1.01922 Mbytes Page：13 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances | Infineon 英飞凌 | | ||
Cool MOS Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Qualified according to JEDEC0) for target applications | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.71683 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
SPD02N60C3产品属性
- 类型
描述
- 型号
SPD02N60C3
- 功能描述
MOSFET COOL MOS PWR TRANS 650V 1.8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINE0N |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
24+ |
DPAK |
5850 |
原装正品 现货库存价格优势! |
|||
INFINEON |
1029+ |
TO-252 |
2301 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
6000 |
专业配单保证原装正品假一罚十 |
|||
华晶替代 |
25+ |
TO252 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
INFINEON/英飞凌 |
24+ |
SOT-252 |
17298 |
原装进口假一罚十 |
|||
INFINEON |
24+ |
TO-247 |
5000 |
十年沉淀唯有原装 |
|||
INFINEON |
21+ |
TO-252 |
91368 |
原装现货假一赔十 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
7500 |
只做原装，欢迎询价，量大价优 |
|||
INFINEON/英飞凌 |
21+ |
TO-252 |
30000 |
优势供应 实单必成 可13点增值税 |
SPD02N60C3规格书下载地址
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