SPS02N60C3价格

参考价格:¥2.5832

型号:SPS02N60C3 品牌:INFINEON 备注:这里有SPS02N60C3多少钱,2025年最近7天走势,今日出价,今日竞价,SPS02N60C3批发/采购报价,SPS02N60C3行情走势销售排行榜,SPS02N60C3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
SPS02N60C3

Cool MOS??Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
SPS02N60C3

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件:1.19171 Mbytes Page:12 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
SPS02N60C3

N-Channel 650V (D-S) Power MOSFET

文件:1.08523 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件:1.19171 Mbytes Page:12 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Cool MOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Qualified according to JEDEC0) for target applications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

N-Channel 650 V (D-S) MOSFET

文件:1.71683 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SPS02N60C3产品属性

  • 类型

    描述

  • 型号

    SPS02N60C3

  • 功能描述

    MOSFET COOL MOS POWER TRANSISTOR

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-5 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
170
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON/英飞凌
22+
TO-251
100000
代理渠道/只做原装/可含税
INFINEON
21+
TO-251
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON
24+
TO251-3
12000
原装正品 假一罚十 可拆样
INFINEON/英飞凌
24+
TO-251A
17220
原装进口假一罚十
I
25+
IPAK
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
INFINEON/英飞凌
25+
TO-251A
14300
全新原装正品支持含税
INFINEON/英飞凌
2022+
TO-251
30000
进口原装现货供应,原装 假一罚十
inf进口原
25+23+
TO-251
23951
绝对原装正品全新进口深圳现货
INFINEON
TO251
15620
一级代理 原装正品假一罚十价格优势长期供货

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