Cool MOS??Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.0Ω(Max)@VGS= 10V APPILICATIONS · SMPS · PFC · General Purpose High Voltage Switching

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

N-Channel 650V (D-S) Power MOSFET

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Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.19171 Mbytes Page：12 Pages

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.19171 Mbytes Page：12 Pages

Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Cool MOS??Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Ultra low effective capacitances • Extreme dv /dt rated • Qualified according to JEDEC0) for target applications

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances