Cool MOS??Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.19171 Mbytes Page：12 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.08523 Mbytes Page：9 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.19171 Mbytes Page：12 Pages

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Qualified according to JEDEC0) for target applications

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

N-Channel 650 V (D-S) MOSFET

文件：1.71683 Mbytes Page：8 Pages