SPU02N60C3价格

参考价格:¥2.5832

型号:SPU02N60C3 品牌:Infineon 备注:这里有SPU02N60C3多少钱,2025年最近7天走势,今日出价,今日竞价,SPU02N60C3批发/采购报价,SPU02N60C3行情走势销售排行榜,SPU02N60C3报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SPU02N60C3

Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Infineon

英飞凌

SPU02N60C3

isc N-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications

ISC

无锡固电

SPU02N60C3

N-Channel 650V (D-S) Power MOSFET

文件:1.08408 Mbytes Page:9 Pages

VBSEMI

微碧半导体

SPU02N60C3

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

SPU02N60C3

Cool MOS Power Transistor

文件:1.22437 Mbytes Page:13 Pages

Infineon

英飞凌

SPU02N60C3

Cool MOS Power Transistor

文件:1.01922 Mbytes Page:13 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Cool MOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Qualified according to JEDEC0) for target applications

Infineon

英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

文件:1.71683 Mbytes Page:8 Pages

VBSEMI

微碧半导体

SPU02N60C3产品属性

  • 类型

    描述

  • 型号

    SPU02N60C3

  • 功能描述

    MOSFET COOL MOS PWR TRANS 650V 1.8A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-6 17:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
TO-251
880000
明嘉莱只做原装正品现货
Infineon/英飞凌
21+
TO-251(I-PAK)
6820
只做原装,质量保证
infineon
25+
TO-251
4500
全新原装、诚信经营、公司现货销售!
INFINEON/英飞凌
24+
TO-251
2000
只做原厂渠道 可追溯货源
INFINEON/英飞凌
24+
TO-251
10000
只做原装欢迎含税交易,假一赔十,放心购买
Infineon(英飞凌)
24+
TO-251
8850
支持大陆交货,美金交易。原装现货库存。
INFINEON/英飞凌
2405+
TO-251
4475
惊喜现货*价打腿折
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON
23+
TO-251
7850
只做原装正品假一赔十为客户做到零风险!!
Infineon
原厂封装
9800
原装进口公司现货假一赔百

SPU02N60C3数据表相关新闻