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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPN02N60C3 | CoolMOS??PowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Ultraloweffectivecapacitances •Extremedv/dtrated •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
SPN02N60C3 | NewrevolutionaryhighvoltagetechnologyUltralowgatechargeUltraloweffectivecapacitances 文件：2.08608 Mbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeUltraloweffectivecapacitances 文件：2.08608 Mbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.71683 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
SPN02N60C3产品属性
- 类型
描述
- 型号
SPN02N60C3
- 功能描述
MOSFET COOL MOS PWR TRANS 650V .4A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2315+ |
SOT-223 |
3986 |
优势代理渠道,原装现货,可全系列订货 |
|||
INFINEON |
23+ |
SOT223 |
66800 |
只上传原装现货 |
|||
INFINEON-英飞凌 |
24+25+/26+27+ |
SOT-223 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
INFINEON原装 |
2022+ |
SOT-223 |
57550 |
||||
Infineon(英飞凌) |
23+ |
标准封装 |
13048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON |
22+ |
P-SOT223-4-4 |
15352 |
原装现货库存.价格优势 |
|||
INF |
SOT-223 |
49877 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
INFINEON/英飞凌 |
2122+ |
SOT223 |
10000 |
全新原装进口,价格美丽 |
|||
INFINEON/英飞凌 |
23+ |
NA/ |
650 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINE0N |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
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SPN02N60C3规格书下载地址
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DdatasheetPDF页码索引
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