Cool MOS??Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Ultra low effective capacitances • Extreme dv /dt rated • Qualified according to JEDEC0) for target applications

New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances

文件：2.08608 Mbytes Page：11 Pages

Cool MOS™ Power Transistor

New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances

文件：2.08608 Mbytes Page：11 Pages

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Qualified according to JEDEC0) for target applications

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

N-Channel 650 V (D-S) MOSFET

文件：1.71683 Mbytes Page：8 Pages