Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Qualified according to JEDEC0) for target applications • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JE

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Qualified according to JEDEC0) for target applications • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.06347 Mbytes Page：13 Pages

Cool MOS Power Transistor

文件：788.12 Kbytes Page：12 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.06347 Mbytes Page：13 Pages

Cool MOS Power Transistor

文件：788.12 Kbytes Page：12 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Cool MOS??Power Transistor

文件：121.29 Kbytes Page：9 Pages

20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

Fast Switching

文件：95.42 Kbytes Page：2 Pages

N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15549 Mbytes Page：11 Pages

20A 600V N-channel enhanced field effect transistor

文件：833.85 Kbytes Page：6 Pages