SPB20N60S5价格

参考价格:¥19.1742

型号:SPB20N60S5 品牌:INF 备注:这里有SPB20N60S5多少钱,2026年最近7天走势,今日出价,今日竞价,SPB20N60S5批发/采购报价,SPB20N60S5行情走势销售排行榜,SPB20N60S5报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SPB20N60S5

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JE

INFINEON

英飞凌

SPB20N60S5

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Qualified according to JEDEC0) for target applications • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

INFINEON

英飞凌

SPB20N60S5

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

ISC

无锡固电

SPB20N60S5

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

INFINEON

英飞凌

SPB20N60S5

Cool MOS??Power Transistor

文件:121.29 Kbytes Page:9 Pages

INFINEON

英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Qualified according to JEDEC0) for target applications • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device per

ISC

无锡固电

isc N-Channel MOSFET Transistor

· DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

SPB20N60S5产品属性

  • 类型

    描述

  • 型号

    SPB20N60S5

  • 功能描述

    MOSFET COOL MOS N-CH 600V 20A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-1 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
TO-263
880000
明嘉莱只做原装正品现货
inf进口原
25+23+
TO-263
23767
绝对原装正品全新进口深圳现货
Infineon/英飞凌
21+
PG-TO263-3
6820
只做原装,质量保证
INFINEON
24+
TO-263
8500
原厂原包原装公司现货,假一赔十,低价出售
TE/泰科
2508+
/
129991
一级代理,原装现货
INEINEON
1435+15+
TO-263
7325
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
INFINEON/英飞凌
2407+
MOS
30098
全新原装!仓库现货,大胆开价!
SIEMENS
17+
TO-263
6200
Infineon/英飞凌
25+
PG-TO263-3
25000
原装正品,假一赔十!

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