Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • 150 °C operating temperature

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

N-Channel 650 V (D-S) MOSFET

文件：1.86869 Mbytes Page：8 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Cool MOS Power Transistor

文件：475.58 Kbytes Page：13 Pages

Cool MOS Power Transistor

文件：475.58 Kbytes Page：13 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.04041 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.85356 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.03276 Mbytes Page：8 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.94216 Mbytes Page：9 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：220.51 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：297.95 Kbytes Page：2 Pages