SPA11N80C价格

参考价格:¥10.2599

型号:SPA11N80C3 品牌:INFINEON 备注:这里有SPA11N80C多少钱,2024年最近7天走势,今日出价,今日竞价,SPA11N80C批发/采购报价,SPA11N80C行情走势销售排行榜,SPA11N80C报价。
型号 功能描述 生产厂家&企业 LOGO 操作

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

iscN-ChannelMOSFETTransistor

•FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MaterialContentDataSheet

文件:32.84 Kbytes Page:1 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOSTMPowerTransistor

文件:509.51 Kbytes Page:10 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOS??PowerTransistor

文件:677.4 Kbytes Page:13 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

文件:295.55 Kbytes Page:10 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

文件:295.55 Kbytes Page:10 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOSTMPowerTransistor

文件:509.51 Kbytes Page:10 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

MaterialContentDataSheet

文件:32.84 Kbytes Page:1 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive

IXYS

IXYS Integrated Circuits Division

IXYS

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive

IXYS

IXYS Integrated Circuits Division

IXYS

11A,812VN-CHANNELPOWERMOSFET

文件:165.26 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

800VN-ChannelMOSFET

文件:266.71 Kbytes Page:10 Pages

SEMIHOW

SemiHow Co.,Ltd.

SEMIHOW

SPA11N80C产品属性

  • 类型

    描述

  • 型号

    SPA11N80C

  • 功能描述

    MOSFET MOSFET N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-24 14:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
23+
TO220F
33500
全新进口原装现货,假一罚十
INF
15+
TO-220F
5000
原装正品长期供货,如假包赔包换 徐小姐13714450367
INFINEON/英飞凌
24+
TO-220F
160205
明嘉莱只做原装正品现货
INFINEON
23+
10PBF
6996
只做原装正品现货
INFINEON
21+
TO220F
4784
十年信誉,只做原装,有挂就有现货!
INFINEON/英飞凌
24+
TO-220F
10000
只做原装欢迎含税交易,假一赔十,放心购买
INFINEON/英飞凌
2122+
TO220F
18990
原装正品,假一赔十,价格优势
INFINEON/英飞凌
21+
TO-220F
60000
绝对原装正品现货,假一罚十
Infineon
18+
NA
3000
进口原装正品优势供应QQ3171516190
Infineon(英飞凌)
22+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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