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SPA11N65价格
参考价格：￥8.9501
型号：SPA11N65C3 品牌：Infineon 备注：这里有SPA11N65多少钱，2025年最近7天走势，今日出价，今日竞价，SPA11N65批发/采购报价，SPA11N65行情走势销售排行榜，SPA11N65报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for ta | Infineon 英飞凌 |   | ||
Isc N-Channel MOSFET Transistor 文件：270.04 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 650V (D-S)Power MOSFET 文件：1.07079 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.01964 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：574.74 Kbytes Page：15 Pages | Infineon 英飞凌 | | ||
500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | |
SPA11N65产品属性
- 类型
描述
- 型号
SPA11N65
- 功能描述
MOSFET COOL MOS PWR TRANS 650V 11A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
TO-220F |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
INFINEON |
23+ |
TO-220F |
65400 |
||||
INFINEON/英飞凌 |
21+ |
TO-220F |
23600 |
十年以上分销商原装进口件服务型企业0755-83790645 |
|||
infineo |
25+ |
TO220F |
15 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INFINEON/英飞凌 |
25+ |
原装 |
32360 |
INFINEON/英飞凌全新特价SPA11N65C3即刻询购立享优惠#长期有货 |
|||
英飞凌 |
2018+ |
TO-220 |
26976 |
代理原装现货/特价热卖! |
|||
Infineon/英飞凌 |
24+ |
PG-TO220FP |
30000 |
原装正品公司现货,假一赔十! |
|||
Infineon/英飞凌 |
24+ |
PG-TO220FP |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon/英飞凌 |
21+ |
PG-TO220FP |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
TO220F |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
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SPA11N65规格书下载地址
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SPA11N65数据表相关新闻
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https://hch01.114ic.com/
2020-11-13SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
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特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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