2150 MHz 1 Watt Power Amplifier with Active Bias

Product Description Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable an

2150 MHz 1 Watt Power Amplifier with Active Bias

Product Description Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and

2150 MHz 1 Watt Power Amplifier with Active Bias

Silicon NPN epitaxial planer type(For low-frequency driver amplification)

Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA0720A (2SA720A) ■ Features ● High collector to emitter voltage VCEO. ● Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 PAIR a) Conductor 22 (7/30) AWG Tinned Copper 0.030 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.050 (1) Color Code Alpha Wire Color Code A Pair Color Pair Color Pair Color 1 BLACK-RED 2 BLACK-WHITE 3 BLACK-GREEN c) Pair 2/Cond Cabled To

Window “View Port” Plugs

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Single 5V RS232/RS422/AppleTalk DCE Transceiver

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Linear Hall-Effect Sensor ICs with Analog Output Available in a Miniature, Low Profile Surface Mount Package

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