Product Description

Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

Product Features

• On-chip Active Bias Control

• Power Control Allows Power Consumption

Reduction

• Patented High Reliability GaAsHBT Technology

• High Linearity Performance: +48dBm OIP3 Typ.

• Surface-Mountable Plastic Package

Applications

• W-CDMA Systems

• Multi-Carrier Applications