5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR

封装/外壳：DO-215AB，SMC 鸥翼 包装：卷带（TR） 描述：TVS DIODE 15VWM 25.2VC DO215AB 电路保护 TVS - 二极管

封装/外壳：DO-215AB，SMC 鸥翼 包装：卷带（TR） 描述：TVS DIODE 15VWM 25.2VC DO215AB 电路保护 TVS - 二极管

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

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