Transient Voltage

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, · Half Bridge · PFC and Other Boost Converter · Buck Converterh

N-Channel FREDFET 1200V, 4A, 4.60廓 Max,

文件：188.75 Kbytes Page：4 Pages

1200V, 4A, 4.2廓 Max Trr ??95nS

文件：204.45 Kbytes Page：4 Pages

Stellaris짰 LM4F120 LaunchPad Evaluation Board

文件：540.59 Kbytes Page：28 Pages