isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, · Half Bridge · PFC and Other Boost Converter · Buck Converterh

FREDFETs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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Stellaris짰 LM4F120 LaunchPad Evaluation Board

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