Full color LED string light, LED full color module

文件：446.42 Kbytes Page：7 Pages

发光二极管/LED

发光二极管/LED

发光二极管/LED

3.5x3.7x1.1 mm 0.2W Intelligent external control surface mount SMD Black LED (MSL:5a)

文件：863.03 Kbytes Page：13 Pages

3.5x3.7x1.1 mm 0.2W Intelligent external control surface mount SMD Black LED (MSL:5a)

文件：863.03 Kbytes Page：13 Pages

INTEGRATED LIGHT SOURCE INTELLIGENT CONTROL OF CHIP-ON-TOP SMD TYPE LED

文件：1.05492 Mbytes Page：15 Pages

INTEGRATED LIGHT SOURCE INTELLIGENT CONTROL OF CHIP-ON-TOP SMD TYPE LED

文件：1.05492 Mbytes Page：15 Pages

INTEGRATED LIGHT SOURCE INTELLIGENT CONTROL OF CHIP-ON-TOP SMD TYPE LED

文件：1.05492 Mbytes Page：15 Pages

INTEGRATED LIGHT SOURCE INTELLIGENT CONTROL OF CHIP-ON-TOP SMD TYPE LED

文件：1.05492 Mbytes Page：15 Pages

DABiC-IV, 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER

DABiC-IV, 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER The A6818– devices combine a 32-bit CMOS shift register, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum fluorescent displays, the 60 V and -40 mA outpu

DABiC-IV, 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER

DABiC-IV, 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER The A6818– devices combine a 32-bit CMOS shift register, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum fluorescent displays, the 60 V and -40 mA outpu

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

NPN Triple Diffused Planar Silicon Transistor

1. High Collector-Base Breakdown Voltage : BVCBO= 1500V 2. High Switching Speed : tF(typ.) =0.1µs 3. For Color Monitor