General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• 6.7 A, 20 V. RDS(ON) = 22 mW @ VGS = 4.5 V

RDS(ON) = 35 mW @ VGS = 2.5 V

• Low gate charge (12 nC typical)

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability