NPN Triple Diffused Planar Silicon Transistor

1. High Collector-Base Breakdown Voltage : BVCBO= 1500V 2. High Switching Speed : tF(typ.) =0.1µs 3. For Color Monitor

J6812, FJAF6812 / High Voltage Color Display Horizontal Deflection Output

1. High Collector-Base Breakdown Voltage : BVCBO= 1500V\n2. High Switching Speed : tF(typ.) =0.1µs\n3. For Color Monitor

High Voltage Color Display Horizontal

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功率开关晶体管

High Voltage Color Display Horizontal

文件：86.76 Kbytes Page：5 Pages

封装/外壳：TO-3P-3 整包 包装：管件 描述：TRANS NPN 750V 12A TO3PF 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

DABiC-IV, 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER

DABiC-IV, 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER The A6818– devices combine a 32-bit CMOS shift register, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum fluorescent displays, the 60 V and -40 mA outpu

DABiC-IV, 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER

DABiC-IV, 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER The A6818– devices combine a 32-bit CMOS shift register, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum fluorescent displays, the 60 V and -40 mA outpu

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a