位置：首页 > IC中文资料第248页 > SIS330DN-T1-GE3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIS330DN-T1-GE3 | N-Channel 30 V (D-S) MOSFET 文件：578.84 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 |   |
SIS330DN-T1-GE3产品属性
- 类型
描述
- 型号
SIS330DN-T1-GE3
- 功能描述
MOSFET 30 Volts 35 Amps 52 Watts
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
更新时间：2025-9-30 22:59:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
12000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY/威世 |
24+ |
QFN8 |
880000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
25+ |
PowerPAK1212-8 |
20300 |
VISHAY/威世原装特价SIS330DN-T1-GE3即刻询购立享优惠#长期有货 |
|||
VISHAY |
08+ |
QFN33 |
300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
2517+ |
PAK1212-8 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
25+23+ |
QFN8 |
37358 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
24+ |
QFN8 |
8950 |
BOM配单专家,发货快,价格低 |
|||
V1SHAY |
24+ |
PowerPAK1212-8 |
17 |
原装正品现货库存假一赔十欢迎询价 |
|||
Vishay(威世) |
23+ |
N/A |
11800 |
||||
VISHAY/威世 |
2023+ |
QFN8 |
2740 |
十五年行业诚信经营,专注全新正品 |
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DdatasheetPDF页码索引
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