N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

N-Channel 100 V (D-S) MOSFET

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 8.0 Twists/foot (m

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 8.0 Twists/foot (m

104/204 In-Line Threaded Diaphragm Seal

FEATURES „ 316L stainless steel top housing (standard) „ Available with diaphragm welded or bonded to top housing or removable threaded capsule diaphragms „ Flow through design reduces the possibility of clogging; ideal for viscous media, slurries and emulsions „ Large 21/2˝ diaphragm compatib

Smooth, high torque, roller ratchet handle

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