Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR420, SiHFR420) • Straight lead (IRFU420, SiHFU420) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

Dynamic dV/dt Rating

文件：4.27854 Mbytes Page：7 Pages

isc N-Channel MOSFET Transistor

文件：316.33 Kbytes Page：2 Pages

Power MOSFET

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR420, SiHFR420) • Straight lead (IRFU420, SiHFU420) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

Power MOSFET

FEATURES • Low gate Charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR420, SiHFR420) • Straight lead (IRFU420, SiHFU420) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

Power MOSFET

Power MOSFET

文件：2.68622 Mbytes Page：7 Pages

Power MOSFET

文件：2.68622 Mbytes Page：7 Pages

N-Channel 650V (D-S)Power MOSFET

文件：1.07793 Mbytes Page：9 Pages

Power MOSFET

文件：267.92 Kbytes Page：13 Pages

N-Channel 650V (D-S)Power MOSFET

文件：1.07786 Mbytes Page：9 Pages

Dynamic dV/dt Rating

文件：4.27854 Mbytes Page：7 Pages

NPN Silicon RF Transistor

DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It reaches perform

SURFACE MOUNT FUSES

Features • Heat resistant ceramic housing • For line or low voltage applications • Low voltage drop • Internationally approved • High pulse resistance • Also available as holder system 425 with mounted fuse 420

Supporting the Intel Celeron processor

文件：1.3709 Mbytes Page：100 Pages

Celeron M Processor on 65 nm Process

文件：1.93023 Mbytes Page：71 Pages

420 LED wire-to-board connector

文件：307.61 Kbytes Page：1 Pages