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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFU420-E3 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 |   | |
SIHFU420-E3 | Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
SIHFU420-E3 | N-Channel 650V (D-S)Power MOSFET 文件：1.07786 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
SIHFU420-E3 | Dynamic dV/dt Rating 文件：4.27854 Mbytes Page：7 Pages | KERSEMI | | |
Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET VDS (V) 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Dynamic dV/dt Rating 文件：4.27854 Mbytes Page：7 Pages | KERSEMI | |
SIHFU420-E3产品属性
- 类型
描述
- 型号
SIHFU420-E3
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
18500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY/威世 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
Vishay |
20+ |
TO-251 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
23+ |
TO-251 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
VIS |
23+ |
TO-251 |
10000 |
原装正品,假一罚十 |
|||
Vishay |
25+ |
TO-251 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
V |
22+ |
TO-251 |
6000 |
十年配单,只做原装 |
|||
VISHAY/威世 |
24+ |
TO-251 |
60000 |
全新原装现货 |
|||
VISHAY/威世 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
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2019-12-7
DdatasheetPDF页码索引
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