位置：首页 > IC中文资料第11362页 > SIHFR9020
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR9020 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFR9020 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | |
SIHFR9020 | Power MOSFET FEATURES • Surface mountable (order as IRFR9020, SiHFR9020) • Straight lead option (order as IRFU9020, SiHFU9020) • Repetitive avalanche ratings • Dynamic dV/dt rating • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see ww | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFR9020 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and | KERSEMI | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.79663 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
INSULATED PC SPACERS/SUPPORTS INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Receiver and Transmitter Interface ACE9020 is a VHF oscillator, up-converter and prescaler. It is used in an offset modulated transmit architecture where a UHF synthesiser makes the channel selection and a second synthesiser generates a fixed transmit offset. A VCO signal drives a buffer in ACE9020 to feed an on chip prescaler and | MITEL | | ||
IGBT Basic II 文件：389.5 Kbytes Page：25 Pages | FAIRCHILD 仙童半导体 | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | HEYCO | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | HEYCO | |
SIHFR9020产品属性
- 类型
描述
- 型号
SIHFR9020
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-252 |
20000 |
只做原装 |
|||
VISHAY/威世 |
新年份 |
TO252 |
67430 |
一级代理原装正品现货,支持实单! |
|||
V |
23+ |
DPAK |
8650 |
受权代理!全新原装现货特价热卖! |
|||
Vishay |
25+ |
TO-252 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
SII/精工 |
25+ |
TO-252 |
20300 |
SII/精工原装特价SIHFR9020TRL-GE3即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
2022+ |
TO-252 |
32500 |
原厂代理 终端免费提供样品 |
|||
NK/南科功率 |
2025+ |
TO-252-2 |
986966 |
国产 |
|||
VISHAY/威世 |
24+ |
TO-252 |
60000 |
||||
VISH |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
VISH |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
SIHFR9020规格书下载地址
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2019-12-7
DdatasheetPDF页码索引
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