位置：首页 > IC中文资料第7522页 > SIHFR9014
SIHFR9014价格
参考价格：￥1.7919
型号：SIHFR9014TR-GE3 品牌：VIS 备注：这里有SIHFR9014多少钱，2026年最近7天走势，今日出价，今日竞价，SIHFR9014批发/采购报价，SIHFR9014行情走势销售排行榜，SIHFR9014报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR9014 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFR9014 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface mount (IRFR9014, SiHFR9014) • Straight lead (IRFU9014, SiHFU9014) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFR9014 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
SiHFR9014 | Power MOSFET Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface mount (IRFR9014, SiHFR9014); | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFR9014 | 丝印代码：DPAK；isc P-Channel MOSFET Transistor 文件：308.54 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
NPN SILICON TRANSISTOR FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V | WINGS 永盛电子 | | ||
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications????????? NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications | SEMTECH 先之科 | | ||
Pre-Amplifier, Low Level & Low Noise Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015 | FAIRCHILD 仙童半导体 | | ||
Advanced Power MOSFET FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Lower RDS(ON) : 0.362 Ω (Typ.) | FAIRCHILD 仙童半导体 | | ||
Pre-Amplifier, Low Level & Low Noise Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015 | FAIRCHILD 仙童半导体 | |
SIHFR9014产品属性
- 类型
描述
- 型号
SIHFR9014
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY |
25+ |
TO-252 |
12160 |
||||
VISHAY/威世 |
23+ |
SOT252 |
7000 |
||||
VISHAY |
22+ |
TO-252 |
20000 |
公司只做原装 品质保证 |
|||
VISHAY/威世 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY |
25+ |
TO-252 |
18000 |
假一赔百原装正品价格优势实单可谈 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY |
24+ |
TO-252 |
25836 |
新到现货，只做全新原装正品 |
|||
Vishay |
21+ |
DNA |
3000 |
公司现货,有挂就有货。 |
|||
VISHAY/威世 |
2022+ |
SOT252 |
29880 |
原厂代理 终端免费提供样品 |
SIHFR9014芯片相关品牌
SIHFR9014规格书下载地址
SIHFR9014参数引脚图相关
- t100k
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- sst25vf040
- sr2m
- spwm
- spice模型
- spd
- sp3232
- soc
- smd
- sl11
- sk100
- sja1000
- SIHM44
- SIHLZ44
- SIHLZ34
- SIHLZ24
- SIHLZ14
- SIHL640
- SIHL630
- SiHL620
- SIHL540
- SIHL530
- SIHL520
- SIHL510
- SIHG25N40D-GE3
- SIHG25N40D-E3
- SIHG24N65E-GE3
- SIHG23N60E-GE3
- SIHG22N65E-GE3
- SIHG22N60S-E3
- SIHG22N60E-GE3
- SIHG22N60E-E3
- SIHG22N50D-GE3
- SIHG22N50D-E3
- SIHG21N60EF-GE3
- SIHG20N50C-E3
- SIHG17N60D-GE3
- SIHG17N60D-E3
- SIHG16N50C-E3
- SIHG14N50D-GE3
- SIHG14N50D-E3
- SIHFZ48
- SIHFZ44
- SIHFZ40
- SIHFZ34
- SIHFZ24
- SIHFZ20
- SIHFZ14
- SIHFZ10
- SIHFR9110TR-GE3
- SIHFR9024TR-GE3
- SIHFR9014TR-GE3
- SIHFR310TRR-GE3
- SIHFR310TR-GE3
- SIHFR120TR-GE3
- SIHFR110TR-GE3
- SIHFR014TR-GE3
- SIHFBF20STRL-GE3
- SIHF8N50L-E3
- SIHF8N50D-E3
- SIHF840
- SIHF830
- SIHF820
- SIHF7N60E-E3
- SIHF744
- SiHF740
- SIHF734
- SIHF730
- SIHF720
- SIHF710
- SIHF6N65E-GE3
- SIHF6N40D-E3
- SIHF644
- SiHF640
- SIHF634
- SIHF630
- SIHF624
- SIHF620
- SiHF614
- SiHF610
- SIHF5N50D-E3
- SIHF540
- SiHF530
- SiHF520
- SIHF30N60E-GE3
- SIHF30N60E-E3
- SIHF28N60EF-GE3
- SIHF23N60E-GE3
- SIHF22N65E-GE3
- SIHF22N60S-E3
- SIHF22N60E-GE3
- SIHF22N60E-E3
SIHFR9014数据表相关新闻
SIHD12N50E-GE3
进口代理
2023-5-11SIHG24N65E-E3原装正品可追溯至原厂
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-4SIHG64N65E-GE3原装正品可追溯至原厂
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-4SIHG47N65E-GE3场效管MOS原装现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-3SiGeMMIC放大器QPA4263C原装现货
深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
2020-3-15SiGe放大器QPA4263C原装现货
深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
2019-12-7
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110
