型号 功能描述 生产厂家 企业 LOGO 操作
SIHFR224

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

VISHAYVishay Siliconix

威世威世科技公司

SIHFR224

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

SIHFR224

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

SIHFR224

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR224, SiHFR224) • Straight lead (IRFU224, SiHFU224) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

VISHAYVishay Siliconix

威世威世科技公司

SIHFR224

iscN-Channel MOSFET Transistor

文件:331.86 Kbytes Page:2 Pages

ISC

无锡固电

SiHFR224

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

KERSEMI

Power MOSFET

文件:368.2 Kbytes Page:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:368.2 Kbytes Page:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:368.2 Kbytes Page:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:368.2 Kbytes Page:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

SCHOTTKY RECTIFIER

125℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SMCDIODE

桑德斯微电子

Mini 7/8 Male Internal Threads 5 Pin Field Attachable

文件:199.12 Kbytes Page:2 Pages

ALPHAWIRE

Axial Lead and Cartridge Fuses - Subminiature Glass Body

文件:45.23 Kbytes Page:1 Pages

LITTELFUSE

力特

SMK FEMALE TO SMK FEMALE STRAIGHT ADAPTER

文件:178.55 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Guard ring for enhanced ruggedness and long term reliability

文件:209.34 Kbytes Page:4 Pages

SMC

桑德斯微电子

SIHFR224产品属性

  • 类型

    描述

  • 型号

    SIHFR224

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

更新时间:2026-3-2 9:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
23+
TO-252
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY/威世
23+
TO-252
50000
全新原装正品现货,支持订货
VISHAY
SOT-252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
Vishay
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
VISHAY/威世
24+
TO-252
60000
VISHAY/威世通
25+
TO-252
10000
原装现货假一罚十
VISHAY/威世
22+
SOT-252
100000
代理渠道/只做原装/可含税
VISHAY/威世
2022+
TO-252
7500
原厂代理 终端免费提供样品
VISHAY/威世
2511
TO-252
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
VISHAY/威世
23+
TO-252
50000
全新原装正品现货,支持订货

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