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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR224T | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | VishayVishay Siliconix 威世科技 |  |   |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：368.2 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：368.2 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
SCHOTTKYRECTIFIER 125℃TJoperation Centertapmodule Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Lowforwardvoltagedrop Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability Baseplate:Nickelplated;Terminals | SMCDIODESMC Diode Solutions 桑德斯微电子器件（南京）有限公司 |  | | |
AxialLeadandCartridgeFuses-SubminiatureGlassBody 文件：45.23 Kbytes Page：1 Pages | LittelfuseLittelfuse Inc. 力特力特公司 |  | | |
SMKFEMALETOSMKFEMALESTRAIGHTADAPTER 文件：178.55 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
Mini7/8MaleInternalThreads5PinFieldAttachable 文件：199.12 Kbytes Page：2 Pages | ALPHAWIREAlpha Wire 阿尔法电线 |  | | |
Guardringforenhancedruggednessandlongtermreliability 文件：209.34 Kbytes Page：4 Pages | SMCSintered Metal Company 烧结金属烧结金属公司 |  | |
SIHFR224T产品属性
- 类型
描述
- 型号
SIHFR224T
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
VISHAY/威世 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Vishay |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世通 |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
VISHAY |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
sino |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VISHAY/威世 |
21+ |
TO-252 |
50000 |
终端可免费提供样品,欢迎咨询 |
|||
VB |
2019 |
DPAK |
55000 |
绝对原装正品假一罚十! |
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SIHFR224T规格书下载地址
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2019-12-7
DdatasheetPDF页码索引
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