iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET

文件：201.3 Kbytes Page：9 Pages

Power MOSFET

文件：223.86 Kbytes Page：11 Pages

Power MOSFET

文件：158.19 Kbytes Page：8 Pages

Power MOSFET

Power MOSFET

文件：158.19 Kbytes Page：8 Pages

Power MOSFET

文件：223.86 Kbytes Page：11 Pages

Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Low Trr and Soft Diode Recovery ● High Performance Optimised Anti-parallel Diode Applications ● Swit

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

HEXFET Power MOSFET

文件：41.64 Kbytes Page：3 Pages

Power MOSFET

文件：158.19 Kbytes Page：8 Pages

Power MOSFET

文件：201.3 Kbytes Page：9 Pages