位置：首页 > IC中文资料第6292页 > IRFBA31N50L
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBA31N50L | HEXFETPowerMOSFET 文件：41.64 Kbytes Page：3 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
PowerMOSFET(Vdss=500V,Rds(on)typ.=0.15ohm,Id=31A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●LowTrrandSoftDiodeRecovery ●HighPerformanceOptimisedAnti-parallelDiode Applications ●Swit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.18Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
PowerMOSFET 文件：158.19 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 |  | | |
PowerMOSFET 文件：201.3 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRFBA31N50L产品属性
- 类型
描述
- 型号
IRFBA31N50L
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
HEXFET Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
21+ROHS |
TO-262 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
23+ |
TO-220 |
8000 |
只做原装现货 |
|||
IR |
23+ |
Super-220 |
50000 |
全新原装正品现货,支持订货 |
|||
IR/VISHAY |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IR |
SOT |
6000 |
原装现货,长期供应,终端可账期 |
||||
23+ |
TO-220大 |
65480 |
|||||
IR |
23+ |
TO-220 |
90000 |
只做原装 全系列供应 价格优势 可开增票 |
|||
IR |
TO-273 |
68900 |
原包原标签100%进口原装常备现货! |
||||
IR |
21+ |
Super-220 |
10000 |
原装现货假一罚十 |
|||
IR/VISHAY |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
IRFBA31N50L芯片相关品牌
IRFBA31N50L规格书下载地址
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IRFBA31N50L数据表相关新闻
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2019-5-5
DdatasheetPDF页码索引
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