位置：首页 > IC中文资料第7135页 > SIHFBC30
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFBC30 | N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 |   | |
SiHFBC30 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFBC30 | Power MOSFET 文件：780.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) • Enhancement mode: Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction | VBSEMI 微碧半导体 | | ||
Power MOSFET Low gate charge Qg results in simple drive requirement\nImproved gate, avalanche, and dynamic dv/dt ruggedness\nFully characterized capacitance and Avalanche voltage and current; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC30S, SiHFBC30S) • Low-profile through-hole (IRFBC30L, SiHFBC30L) • Available in tape and reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of c | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC30S, SiHFBC30S) • Low-profile through-hole (IRFBC30L, SiHFBC30L) • Available in tape and reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of c | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：155.85 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：155.85 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：780.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
SIHFBC30产品属性
- 类型
描述
- 型号
SIHFBC30
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
22+ |
SIL-10 |
3000 |
原装正品,支持实单 |
|||
VISHAY/威世 |
20+ |
TO-263 |
7500 |
现货很近!原厂很远!只做原装 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
VB |
25+ |
T0-263 |
10000 |
原装现货假一罚十 |
|||
SIAI |
24+ |
DFN3X3-8L |
9000000 |
一级代理/放心采购 |
|||
FUJI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
VISHAY/威世 |
2450+ |
TO263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SAMSU |
25+ |
SOP3.9 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
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DdatasheetPDF页码索引
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