Power MOSFET

FEATURES • Surface-mount (IRFBC30S, SiHFBC30S) • Low-profile through-hole (IRFBC30L, SiHFBC30L) • Available in tape and reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of c

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

Power MOSFET

Surface-mount (IRFBC30S, SiHFBC30S)\nLow-profile through-hole (IRFBC30L, SiHFBC30L)\nAvailable in tape and reel (IRFBC30S, SiHFBC30S);

Power MOSFET

文件：961.84 Kbytes Page：8 Pages

Power MOSFET

文件：961.84 Kbytes Page：8 Pages

Power MOSFET

文件：961.84 Kbytes Page：8 Pages